Springer - Research On Chemical Mechanical Polishing Mechanism Of Novel Diffusion Barrier Ru For Cu Interconnect (2018 EN)

Author: Jie Cheng
Full Title: Research On Chemical Mechanical Polishing Mechanism Of Novel Diffusion Barrier Ru For Cu Interconnect
Publisher: Springer; 1st ed. 2018 edition (September 8, 2017)
Year: 2018
ISBN-13: 9789811061653 (978-981-10-6165-3), 9789811061646 (978-981-10-6164-6)
ISBN-10: 9811061653, 9811061645
Pages: 137
Language: English
Genre: Engineering
File type: PDF (True)
Quality: 10/10
Price: 85.59 €


This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.

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