Springer - Defects And Impurities In Silicon Materials: An Introduction To Atomic-Level... (2015 EN)

Discussion in 'Others' started by Kanka, Nov 23, 2016.

  1. Kanka

    Kanka Well-Known Member Loyal User

    Messages:
    8,852
    Likes Received:
    189
    Trophy Points:
    63
    [​IMG]

    Author: Yutaka Yoshida (Editor), Guido Langouche (Editor)
    Full Title: Defects And Impurities In Silicon Materials: An Introduction To Atomic-Level Silicon Engineering
    Publisher: Springer; 1st ed. 2015 edition (April 19, 2016)
    Year: 2015
    ISBN-13: 9784431558002 (978-4-431-55800-2), 9784431557999 (978-4-431-55799-9)
    ISBN-10: 4431558004, 4431557997
    Pages: 487
    Language: English
    Genre: Condensed Matter Physics
    File type: PDF (True)
    Quality: 10/10
    Price: 46.79 €


    This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques.

    The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

    -------------
     
    Last edited by a moderator: Mar 22, 2019

Share This Page